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BB501C build in biasing circuit mos fet ic uhf rf amplifier ade-208-701d (z) 5th. edition mar. 2001 features build in biasing circuit; to reduce using parts cost & pc board space. high gain; pg = 21.5 db typ. at f = 900 mhz low noise; nf = 1.85 db typ. at f = 900 mhz withstanding to esd; build in esd absorbing diode. withstand up to 200v at c=200pf, rs=0 conditions. provide mini mold packages; cmpak-4(sot-343mod) outline cmpak-4 1. source 2. gate1 3. gate2 4. drain 1 4 3 2 notes: 1. marking is ?s . 2. BB501C is individual type number of hitachi bbfet.
BB501C 2 absolute maximum ratings (ta = 25?) item symbol ratings unit drain to source voltage v ds 6v gate1 to source voltage v g1s +6 ?0 v gate2 to source voltage v g2s +6 ?0 v drain current i d 20 ma channel power dissipation pch 100 mw channel temperature tch 150 c storage temperature tstg ?5 to +150 c electrical characteristics (ta = 25?) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 6 v i d = 200 m a v g1s = v g2s = 0 gate1 to source breakdown voltage v (br)g1ss +6v i g1 = +10 m a v g2s = v ds = 0 gate2 to source breakdown voltage v (br)g2ss +6v i g2 = +10 m a v g1s = v ds = 0 gate1 to source cutoff current i g1ss +100 na v g1s = +5v v g2s = v ds = 0 gate2 to source cutoff current i g2ss +100 na v g2s = +5v v g1s = v ds = 0 gate1 to source cutoff voltage v g1s(off) 0.5 0.7 1.0 v v ds = 5v, v g2s = 4v i d = 100 m a gate2 to source cutoff voltage v g2s(off) 0.5 0.7 1.0 v v ds = 5v, v g1s = 5v i d = 100 m a drain current i d(op) 7 1013mav ds = 5v, v g1 = 5v v g2s = 4v, r g = 47k w forward transfer admittance |y fs | 192429msv ds = 5v, v g1 = 5v v g2s =4v r g = 47k w , f = 1khz input capacitance c iss 1.4 1.7 2.0 pf v ds = 5v, v g1 = 5v output capacitance c oss 0.7 1.1 1.5 pf v g2s =4v, r g = 47k w reverse transfer capacitance c rss 0.019 0.04 pf f = 1mhz power gain pg 17 21.5 db v ds = 5v, v g1 = 5v v g2s =4v, r g = 47k w noise figure nf 1.85 2.4 db f = 900mhz
BB501C 3 main characteristics
BB501C 4 900mhz power gain, noise figure test circuit input output c2 c1 l1 l2 l3 l4 s g1 g2 r1 r2 c3 r3 rfc c6 c5 c4 d v g2 v g1 v d c1, c2 c3 c4 to c6 r1 r2 r3 variable capacitor (10pf max) disk capacitor (1000pf) air capacitor (1000pf) 47 k 47 k 4.7 k : : : : : : 26 3 3 l2 : 18 10 10 l4 : 29 7 7 l3 : ( f 1mm copper wire) unit : mm rfc : f 1mm copper wire with enamel 4turns inside dia 6mm 21 10 8 l1 : 10
BB501C 5 200 150 100 50 0 50 100 150 200 0 1 2345 20 16 12 8 4 v = 4 v v = v g2s g1 ds r = 22 k g w 27 k w 20 16 12 8 4 0 1 2345 20 16 12 8 4 0 12345 33 k w 39 k w 47 k w 56 k w 68 k w 82 k w 100 k w 2 v v = 1 v g2s v = 5 v r = 33 k ds g 4 v 3 v v = 1 v g2s v = 5 v r = 47 k ds g 3 v 4 v 2 v channel power dissipation pch (mw) ambient temperature ta ( c) maximum channel power dissipation curve drain current i (ma) d typical output characteristics drain to source voltage v (v) ds drain current vs. gate1 voltage gate1 voltage v (v) g1 drain current i (ma) d drain current vs. gate1 voltage gate1 voltage v (v) g1 drain current i (ma) d
BB501C 6 20 16 12 8 4 0 1 2345 2 v v = 1 v g2s v = 5 v r = 68 k ds g 4 v 3 v 0 1 2345 30 24 18 12 6 v = 5 v r = 33 k f = 1 khz ds g 4 v 2 v 3 v v = 1 v g2s 0 1 2345 30 24 18 12 6 v = 5 v r = 47 k f = 1 khz ds g v = 1 v g2s 4 v 3 v 2 v 0 1 2345 30 24 18 12 6 v = 5 v r = 68 k f = 1 khz ds g v = 1 v g2s 4 v 3 v 2 v drain current vs. gate1 voltage gate1 voltage v (v) g1 drain current i (ma) d gate1 voltage v (v) g1 forward transfer admittance vs. gate1 voltage fs forward transfer admittance |y | (ms) gate1 voltage v (v) g1 forward transfer admittance vs. gate1 voltage fs forward transfer admittance |y | (ms) gate1 voltage v (v) g1 forward transfer admittance vs. gate1 voltage fs forward transfer admittance |y | (ms)
BB501C 7 0 5101520 4 3 2 1 0 10 20 50 100 0 5 10 15 20 30 25 20 15 10 5 0 10 100 20 50 30 25 20 15 10 5 0 ds g2s g v = v = 5 v v = 4 v r = variable f = 900 mhz g1 4 3 2 1 0 ds g2s g v = v = 5 v v = 4 v r = variable f = 900 mhz g1 g1 ds g2s v = v = 5 v v = 4 v f = 900 mhz drain current i (ma) d noise figure nf (db) power gain pg (db) gate resistance r (k w ) g noise figure vs. gate resistance gate resistance r (k w ) g power gain vs. gate resistance power gain pg (db) drain current i (ma) d noise figure nf (db) power gain vs. drain current noise figure vs. drain current g1 ds g2s v = v = 5 v v = 4 v f = 900 mhz
BB501C 8 0 1 2 34 10 100 20 50 4 3 2 1 0 20 15 10 5 0 25 20 15 10 5 0 1 23 4 v = 5 v r = 47 k f = 900 mhz ds g 1 23 4 5 4 3 2 1 v = 5 v r = 47 k f = 900 mhz ds g v = 5 v r = 47 k f = 1 mhz ds g ds g2s v = v = 5 v v = 4 v g1 drain current i (ma) d gate resistance r (k w ) g power gain pg (db) power gain vs. gate2 to source voltage gate2 to source voltage v (v) g2s drain current vs. gate resistance gate2 to source voltage v (v) g2s gate2 to source voltage v (v) g2s input capacitance ciss (pf) input capacitance vs. gate2 to source voltage noise figure nf (db) noise figure vs. gate2 to source voltage
BB501C 9 4 0 10 20 30 40 50 3 2 10 ds g2s g v = v = 5 v v = 4 v r = 47 k g1 gain reduction gr (db) gain reduction vs. gate2 to source voltage gate2 to source voltage v (v) g2s
BB501C 10 10 5 4 3 2 1.5 1 .8 ? ? ? ? ?0 .6 .4 .2 0 ?2 ?4 ?6 ?8 ? ?.5 .2 .4 .6 .8 1 2 3 4 5 1.5 10 scale: 1 / div. 0 30 60 90 120 150 180 ?50 ?0 ?0 ?0 ?20 scale: 0.002 / div. 0 30 60 90 120 150 180 ?50 ?0 ?0 ?0 ?20 10 5 4 3 2 1.5 1 .8 ? ? ? ? ?0 .6 .4 .2 0 ?2 ?4 ?6 ?8 ? ?.5 .2 .4 .6 .8 1 2 3 4 5 1.5 10 test condition: ds w g1 v = 5 v , v = 5 v v = 4 v , r = 47 k , zo = 50 g2s g 50 to 1000 mhz (50 mhz step) w test condition: ds w g1 v = 5 v , v = 5 v v = 4 v , r = 47 k , zo = 50 g2s g 50 to 1000 mhz (50 mhz step) w test condition: ds w g1 v = 5 v , v = 5 v v = 4 v , r = 47 k , zo = 50 g2s g 50 to 1000 mhz (50 mhz step) w test condition: ds w g1 v = 5 v , v = 5 v v = 4 v , r = 47 k , zo = 50 g2s g 50 to 1000 mhz (50 mhz step) w s11 parameter vs. frequency s21 parameter vs. frequency s12 parameter vs. frequency s22 parameter vs. frequency
BB501C 11 sparameter (v ds = v g1 = 5v, v g2s = 4v, r g = 47k w , zo = 50 w ) s11 s21 s12 s22 f (mhz) mag ang mag ang mag ang mag ang 50 0.974 ?.8 2.40 176.4 0.00057 78.1 0.997 ?.0 100 0.974 ?0.0 2.38 172.2 0.00144 82.4 0.998 ?.2 150 0.974 ?3.6 2.38 168.4 0.00211 78.7 0.997 ?.0 200 0.965 ?6.5 2.37 164.1 0.00316 84.8 0.995 ?.1 250 0.963 ?0.0 2.35 160.4 0.00358 76.3 0.994 ?0.2 300 0.953 ?3.7 2.32 156.8 0.00431 84.0 0.992 ?2.2 350 0.947 ?6.8 2.30 152.9 0.00503 79.0 0.990 ?4.2 400 0.942 ?9.6 2.28 148.6 0.00545 76.6 0.987 ?6.2 450 0.929 ?2.8 2.26 144.9 0.00630 80.3 0.984 ?8.1 500 0.923 ?5.4 2.21 141.2 0.00646 76.1 0.981 ?0.2 550 0.912 ?8.5 2.19 137.6 0.00693 73.7 0.977 ?2.1 600 0.903 ?1.2 2.15 134.2 0.00732 72.9 0.974 ?4.1 650 0.886 ?4.2 2.12 130.6 0.00729 74.6 0.971 ?6.0 700 0.879 ?6.8 2.08 127.4 0.00733 72.0 0.967 ?7.8 750 0.873 ?9.2 2.06 124.3 0.00762 74.5 0.962 ?9.7 800 0.859 ?2.4 2.03 120.8 0.00756 73.7 0.959 ?1.7 850 0.846 ?5.4 2.00 117.3 0.00772 75.5 0.955 ?3.6 900 0.836 ?8.0 1.96 114.3 0.00775 79.6 0.951 ?5.5 950 0.827 ?0.4 1.93 111.0 0.00801 81.7 0.946 ?7.3 1000 0.815 ?2.8 1.89 108.0 0.00704 81.0 0.942 ?9.4
BB501C 12 package dimensions 2.0 0.2 0.3 2.1 0.3 0.65 0.6 1.25 0.2 0.16 0 ?0.1 0.9 0.1 + 0.1 ?0.05 0.4 + 0.1 ?0.05 0.3 + 0.1 ?0.05 + 0.1 ?0.06 0.65 0.65 1.3 0.2 0.3 + 0.1 ?0.05 0.425 0.425 0.2 hitachi code jedec eiaj mass (reference value) cmpak-4(t) conforms 0.006 g 1.25 0.1 as of january, 2001 unit: mm
BB501C 13 cautions 1. hitachi neither warrants nor grants licenses of any rights of hitachi? or any third party? patent, copyright, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third party? rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, contact hitachi? sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachi? sales office for any questions regarding this document or hitachi semiconductor products. hitachi, ltd. semiconductor & integrated circuits. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: tokyo (03) 3270-2111 fax: (03) 3270-5109 copyright ? hitachi, ltd., 2000. all rights reserved. printed in japan. hitachi asia ltd. hitachi tower 16 collyer quay #20-00, singapore 049318 tel : <65>-538-6533/538-8577 fax : <65>-538-6933/538-3877 url : http://www.hitachi.com.sg url northamerica : http://semiconductor.hitachi.com/ europe : http://www.hitachi-eu.com/hel/ecg asia : http://sicapac.hitachi-asia.com japan : http://www.hitachi.co.jp/sicd/indx.htm hitachi asia ltd. (taipei branch office) 4/f, no. 167, tun hwa north road, hung-kuo building, taipei (105), taiwan tel : <886>-(2)-2718-3666 fax : <886>-(2)-2718-8180 telex : 23222 has-tp url : http://www.hitachi.com.tw hitachi asia (hong kong) ltd. group iii (electronic components) 7/f., north tower, world finance centre, harbour city, canton road tsim sha tsui, kowloon, hong kong tel : <852>-(2)-735-9218 fax : <852>-(2)-730-0281 url : http://www.hitachi.com.hk hitachi europe ltd. electronic components group. whitebrook park lower cookham road maidenhead berkshire sl6 8ya, united kingdom tel: <44> (1628) 585000 fax: <44> (1628) 585160 hitachi europe gmbh electronic components group dornacher stra b e 3 d-85622 feldkirchen, munich germany tel: <49> (89) 9 9180-0 fax: <49> (89) 9 29 30 00 hitachi semiconductor (america) inc. 179 east tasman drive, san jose,ca 95134 tel: <1> (408) 433-1990 fax: <1>(408) 433-0223 for further information write to: colophon 2.0

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